Справочник IGBT. FGY75N60SMD

 

FGY75N60SMD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: FGY75N60SMD
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 750
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 150
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 56
   Емкость коллектора типовая (Cc), pf: 390
   Общий заряд затвора (Qg), typ, nC: 248
   Тип корпуса: POWER-247

 Аналог (замена) для FGY75N60SMD

 

 

FGY75N60SMD Datasheet (PDF)

 ..1. Size:602K  1
 fgy75n60smd.pdf

FGY75N60SMD FGY75N60SMD

June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low co

 9.1. Size:658K  onsemi
 fgy75t95lqdt.pdf

FGY75N60SMD FGY75N60SMD

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Vol

 9.2. Size:585K  onsemi
 fgy75t95sqdt.pdf

FGY75N60SMD FGY75N60SMD

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95SQDTTrench Field Stop 4th generation High Speed IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.69 V (Typ.) High Current CapabilityC Low Saturation Vol

 9.3. Size:618K  onsemi
 fgy75t120sqdn.pdf

FGY75N60SMD FGY75N60SMD

FGY75T120SQDNUltra Field Stop IGBT, 1200 V, 75 AGeneral DescriptionThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provideswww.onsemi.comsuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar appli

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