FGY75N60SMD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

FGY75N60SMD Specs and Replacement

   Type Designator: FGY75N60SMD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Package: POWER-247

FGY75N60SMD Substitution

- IGBT ⓘ Cross-Reference Search

FGY75N60SMD datasheet

..1. Size:602K 1
fgy75n60smd.pdf pdf_icon

June 2014 FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage VCE(sat) = 1.9 V @ IC = 75 A mance for solar inverter, UPS, welder and PFC applications High Input Impedance where low co... See More ⇒

9.1. Size:658K onsemi
fgy75t95lqdt.pdf pdf_icon

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.31 V (Typ.) High Current Capability C Low Saturation Vol... See More ⇒

9.2. Size:585K onsemi
fgy75t95sqdt.pdf pdf_icon

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.69 V (Typ.) High Current Capability C Low Saturation Vol... See More ⇒

9.3. Size:618K onsemi
fgy75t120sqdn.pdf pdf_icon

FGY75T120SQDN Ultra Field Stop IGBT, 1200 V, 75 A General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides www.onsemi.com superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar appli... See More ⇒

Specs: FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , SGT40N60NPFDPN , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N .