SGF23N60UF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGF23N60UF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 75 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 27 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO3PF

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SGF23N60UF datasheet

 ..1. Size:541K  fairchild semi
 sgf23n60uf.pdf pdf_icon

SGF23N60UF

October 2001 IGBT SGF23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 12A UF series is designed for the applications such as motor High Input Impedance control and general inverters where High

 ..2. Size:394K  onsemi
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SGF23N60UF

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FGL60N100BNTD, FGP20N60UFD, FGP5N60LS, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, RJP30E2DPP-M0, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN