SGF23N60UF PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SGF23N60UF PDF Specs and Replacement

   Type Designator: SGF23N60UF
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 23 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO3PF

SGF23N60UF Substitution

- IGBT ⓘ Cross-Reference Search

SGF23N60UF PDF specs

..1. Size:541K fairchild semi
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October 2001 IGBT SGF23N60UF Ultra-Fast IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switching series provides low conduction and switching losses. Low Saturation Voltage VCE(sat) = 2.1 V @ IC = 12A UF series is designed for the applications such as motor High Input Impedance control and general inverters where High ... See More ⇒

..2. Size:394K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , RJP30E2DPP-M0 , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN .