All IGBT. SGF23N60UF Datasheet

 

SGF23N60UF Datasheet and Replacement


   Type Designator: SGF23N60UF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 75 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 23 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qgⓘ - Total Gate Charge, typ: 49 nC
   Package: TO3PF
      - IGBT Cross-Reference

 

SGF23N60UF Datasheet (PDF)

 ..1. Size:541K  fairchild semi
 sgf23n60uf.pdf pdf_icon

SGF23N60UF

October 2001 IGBTSGF23N60UFUltra-Fast IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) UF High Speed Switchingseries provides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12AUF series is designed for the applications such as motor High Input Impedancecontrol and general inverters where High

 ..2. Size:394K  onsemi
 sgf23n60uf.pdf pdf_icon

SGF23N60UF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , BT40T60ANF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN .

Keywords - SGF23N60UF transistor datasheet

 SGF23N60UF cross reference
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