SGS5N150UF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGS5N150UF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1500

Voltaje de saturación colector-emisor (Vce sat): 4.7

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 5

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220F

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SGS5N150UF Datasheet (PDF)

1.1. sgs5n150uf.pdf Size:289K _fairchild_semi

 IGBT SGS5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) • High Speed Switching provides low conduction and switching losses. • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A SGS5N150UF is designed for the Switching Power • High Input Impedance Supply applications. Application Switching Power Supply - High Input Voltage Off-line Co

5.1. sgs5n60rufd.pdf Size:614K _fairchild_semi

April 2001 IGBT SGS5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A series is

Otros transistores... FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , 12N60C3D , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN .