SGS5N150UF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: SGS5N150UF

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1500

Напряжение насыщения коллектор-эмиттер (Ucesat): 4.7

Максимальный постоянный ток коллектора (Ic): 5

Корпус: TO220F

Аналог (замена) для SGS5N150UF

SGS5N150UF Datasheet (PDF)

1.1. sgs5n150uf.pdf Size:289K _fairchild_semi

 IGBT SGS5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor (IGBT) • High Speed Switching provides low conduction and switching losses. • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A SGS5N150UF is designed for the Switching Power • High Input Impedance Supply applications. Application Switching Power Supply - High Input Voltage Off-line Co

5.1. sgs5n60rufd.pdf Size:614K _fairchild_semi

April 2001 IGBT SGS5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A series is

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