All IGBT. SGS5N150UF Datasheet


SGS5N150UF IGBT. Datasheet pdf. Equivalent

Type Designator: SGS5N150UF

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1500

Collector-Emitter saturation Voltage |Vcesat|, V: 4.7

Maximum Collector Current |Ic|, A: 5

Package: TO220F

SGS5N150UF Transistor Equivalent Substitute - IGBT Cross-Reference Search


SGS5N150UF Datasheet (PDF)

0.1. sgs5n150uf.pdf Size:289K _fairchild_semi


IGBTSGS5N150UFGeneral Description FeaturesFairchilds Insulated Gate Bipolar Transistor (IGBT) High Speed Switchingprovides low conduction and switching losses. Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5ASGS5N150UF is designed for the Switching Power High Input ImpedanceSupply applications.ApplicationSwitching Power Supply - High Input Voltage Off-line Co

9.1. sgs5n60rufd.pdf Size:614K _fairchild_semi


April 2001 IGBTSGS5N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5Aseries is

Datasheet: FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , 12N60C3D , NGB15N41CLT4 , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN .


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