NGB15N41CLT4 Todos los transistores

 

NGB15N41CLT4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB15N41CLT4

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 107W

Tensión colector-emisor (Vce): 410V

Voltaje de saturación colector-emisor (Vce sat): 1.9V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 15A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D2PAK-3

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NGB15N41CLT4 Datasheet (PDF)

1.1. ngd15n41cl ngb15n41cl ngp15n41cl.pdf Size:167K _onsemi

NGB15N41CLT4
NGB15N41CLT4

NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include Igni

2.1. ngb15n41a.pdf Size:146K _igbt

NGB15N41CLT4
NGB15N41CLT4

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http://onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary

 

Otros transistores... FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , IRG4PC40W , NGB18N40CLB , NGB8202A , NGB8202N , NGB8204N , NGB8206A , NGB8206N , NGB8207AN , NGB8207N .

 

 
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