NGB15N41CL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB15N41CL  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 107 W

|Vce|ⓘ - Tensión máxima colector-emisor: 440 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 55 pF

Encapsulados: D2PAK

  📄📄 Copiar 

 Búsqueda de reemplazo de NGB15N41CL IGBT

- Selecciónⓘ de transistores por parámetros

 

NGB15N41CL datasheet

 ..1. Size:167K  onsemi
 ngd15n41cl ngb15n41cl ngp15n41cl.pdf pdf_icon

NGB15N41CL

NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http //onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include I

 6.1. Size:146K  onsemi
 ngb15n41a.pdf pdf_icon

NGB15N41CL

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http //onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary

Otros transistores... FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, BT40T60ANF, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N