NGB15N41CL Datasheet. Specs and Replacement

Type Designator: NGB15N41CL  📄📄 

Type: IGBT + Built-in Zener Diodes

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 107 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V

Coesⓘ - Output Capacitance, typ: 55 pF

Package: D2PAK

  📄📄 Copy 

 NGB15N41CL Substitution

- IGBTⓘ Cross-Reference Search

 

NGB15N41CL datasheet

 ..1. Size:167K  onsemi
 ngd15n41cl ngb15n41cl ngp15n41cl.pdf pdf_icon

NGB15N41CL

NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http //onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include I... See More ⇒

 6.1. Size:146K  onsemi
 ngb15n41a.pdf pdf_icon

NGB15N41CL

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http //onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary ... See More ⇒

Specs: FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, YGW40N65F1, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N

Keywords - NGB15N41CL transistor spec

 NGB15N41CL cross reference
 NGB15N41CL equivalent finder
 NGB15N41CL lookup
 NGB15N41CL substitution
 NGB15N41CL replacement