All IGBT. NGB15N41CL Datasheet

 

NGB15N41CL IGBT. Datasheet pdf. Equivalent


   Type Designator: NGB15N41CL
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 107 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Coesⓘ - Output Capacitance, typ: 55 pF
   Package: D2PAK

 NGB15N41CL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGB15N41CL Datasheet (PDF)

 ..1. Size:167K  onsemi
 ngd15n41cl ngb15n41cl ngp15n41cl.pdf

NGB15N41CL NGB15N41CL

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I

 6.1. Size:146K  onsemi
 ngb15n41a.pdf

NGB15N41CL NGB15N41CL

NGD15N41CL,NGD15N41ACL,NGB15N41CL,NGB15N41ACL,NGP15N41CL,NGP15N41ACLhttp://onsemi.comIgnition IGBT 15 A, 410 V15 AMPSN-Channel DPAK, D2PAK and TO-220410 VOLTSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresVCE(on) 3 2.1 V @monolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary

Datasheet: FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , IHW20N120R3 , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N .

 

 
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