NGB18N40CLB Todos los transistores

 

NGB18N40CLB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGB18N40CLB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 75 pF
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

NGB18N40CLB Datasheet (PDF)

 ..1. Size:87K  1
 ngb18n40clb.pdf pdf_icon

NGB18N40CLB

NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit

 6.1. Size:125K  onsemi
 ngb18n40a.pdf pdf_icon

NGB18N40CLB

NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi

Otros transistores... FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , GT30F126 , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL .

History: IRGP20B60PD | FGT313 | SGB15N60HS | TGAN30N120FD | AP30G120SW | IRGP4066D-E | IXBH15N170

 

 
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