NGB18N40CLB Specs and Replacement
Type Designator: NGB18N40CLB
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Coesⓘ - Output Capacitance, typ: 75 pF
Package: D2PAK
NGB18N40CLB Substitution - IGBT ⓘ Cross-Reference Search
NGB18N40CLB datasheet
ngb18n40clb.pdf
NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high current swit... See More ⇒
ngb18n40a.pdf
NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 18 AMPS, 400 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.0 V @ include Ignition, Direct Fuel Injection, or wherever hi... See More ⇒
Specs: FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , FGA60N65SMD , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL .
Keywords - NGB18N40CLB transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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