NGB8207AN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207AN  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 165 W

|Vce|ⓘ - Tensión máxima colector-emisor: 365 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 15 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 2320 nS

Coesⓘ - Capacitancia de salida, typ: 90 pF

Encapsulados: D2PAK

  📄📄 Copiar 

 Búsqueda de reemplazo de NGB8207AN IGBT

- Selecciónⓘ de transistores por parámetros

 

NGB8207AN datasheet

 ..1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 6.1. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 7.1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.2. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

MOSTRAR MÁS

Otros transistores... SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, GT30F126, NGB8207N, NGD15N41CL, NGD18N40CLB, NGD8201A, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D