NGB8207AN Даташит. Аналоги. Параметры и характеристики.
Наименование: NGB8207AN
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 165 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 365 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 2320 nS
Coesⓘ - Выходная емкость, типовая: 90 pF
Тип корпуса: D2PAK
- подбор IGBT транзистора по параметрам
NGB8207AN Datasheet (PDF)
ngb8207an ngb8207abn.pdf
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
ngb8207ab.pdf
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
ngb8207n ngb8207bn.pdf
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207b.pdf
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
Другие IGBT... SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , FGA60N65SMD , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D .
History: SSG55N60M | MMG50A120B7HN | CPV364M4KPBF
History: SSG55N60M | MMG50A120B7HN | CPV364M4KPBF
Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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