NGB8207AN datasheet, аналоги, основные параметры

Наименование: NGB8207AN  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 165 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 365 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃

tr ⓘ - Время нарастания типовое: 2320 nS

Coesⓘ - Выходная емкость, типовая: 90 pF

Тип корпуса: D2PAK

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 Аналог (замена) для NGB8207AN

- подбор ⓘ IGBT транзистора по параметрам

 

NGB8207AN даташит

 ..1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 6.1. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 7.1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.2. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, GT30F126, NGB8207N, NGD15N41CL, NGD18N40CLB, NGD8201A, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D