All IGBT. NGB8207AN Datasheet

 

NGB8207AN Datasheet and Replacement


   Type Designator: NGB8207AN
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 365 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 2320 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: D2PAK
      - IGBT Cross-Reference

 

NGB8207AN Datasheet (PDF)

 ..1. Size:124K  1
ngb8207an ngb8207abn.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 6.1. Size:124K  onsemi
ngb8207ab.pdf pdf_icon

NGB8207AN

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.2. Size:130K  onsemi
ngb8207b.pdf pdf_icon

NGB8207AN

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

Datasheet: SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , FGA60N65SMD , NGB8207N , NGD15N41CL , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D .

History: SGTP5T60SD1F | PDMB100E6 | NGD8205N | FGA180N33ATD | FII50-12E | APT15GT120SRG | LGM100HF120S2F1A

Keywords - NGB8207AN transistor datasheet

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