NGD15N41CL Todos los transistores

 

NGD15N41CL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD15N41CL
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 107 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 440 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 1.9 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 4000 nS
   Coesⓘ - Capacitancia de salida, typ: 55 pF
   Paquete / Cubierta: DPAK
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NGD15N41CL Datasheet (PDF)

 ..1. Size:167K  onsemi
 ngd15n41cl ngb15n41cl ngp15n41cl.pdf pdf_icon

NGD15N41CL

NGD15N41CL,NGB15N41CL,NGP15N41CLPreferred Device Ignition IGBT15 Amps, 410 Voltshttp://onsemi.comN-Channel DPAK, D2PAK and TO-22015 AMPSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped410 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.1 V @include I

 6.1. Size:146K  onsemi
 ngd15n41a.pdf pdf_icon

NGD15N41CL

NGD15N41CL,NGD15N41ACL,NGB15N41CL,NGB15N41ACL,NGP15N41CL,NGP15N41ACLhttp://onsemi.comIgnition IGBT 15 A, 410 V15 AMPSN-Channel DPAK, D2PAK and TO-220410 VOLTSThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresVCE(on) 3 2.1 V @monolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary

Otros transistores... NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , IRGP4063D , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D .

 

 
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