NGD15N41CL Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NGD15N41CL Specs and Replacement

   Type Designator: NGD15N41CL
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 107 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 440 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 4000 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Package: DPAK

NGD15N41CL Substitution

- IGBT ⓘ Cross-Reference Search

NGD15N41CL datasheet

..1. Size:167K onsemi
ngd15n41cl ngb15n41cl ngp15n41cl.pdf pdf_icon

NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http //onsemi.com N-Channel DPAK, D2PAK and TO-220 15 AMPS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 410 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.1 V @ include I... See More ⇒

6.1. Size:146K onsemi
ngd15n41a.pdf pdf_icon

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL http //onsemi.com Ignition IGBT 15 A, 410 V 15 AMPS N-Channel DPAK, D2PAK and TO-220 410 VOLTS This Logic Level Insulated Gate Bipolar Transistor (IGBT) features VCE(on) 3 2.1 V @ monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary ... See More ⇒

Specs: NGB18N40CLB , NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , IRG7IC28U , NGD18N40CLB , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D .