NGD18N40CLB
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGD18N40CLB
Tipo de transistor: IGBT + Built-in Zener Diodes
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115
W
|Vce|ⓘ - Tensión máxima colector-emisor: 430
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 18
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.4
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 1.9
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 4500
nS
Coesⓘ - Capacitancia de salida, typ: 75
pF
Paquete / Cubierta:
DPAK
Búsqueda de reemplazo de NGD18N40CLB
- IGBT
NGD18N40CLB
Datasheet (PDF)
..1. Size:126K 1
ngd18n40clb.pdf 
NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren
6.1. Size:126K onsemi
ngd18n40a.pdf
NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren
7.1. Size:132K onsemi
ngd18n45.pdf
NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ
7.2. Size:132K onsemi
ngd18n45clbt4g.pdf
NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ
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.
