NGD18N40CLB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD18N40CLB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 115 W

|Vce|ⓘ - Tensión máxima colector-emisor: 430 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 4500 nS

Coesⓘ - Capacitancia de salida, typ: 75 pF

Encapsulados: DPAK

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NGD18N40CLB datasheet

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NGD18N40CLB

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 6.1. Size:126K  onsemi
 ngd18n40a.pdf pdf_icon

NGD18N40CLB

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 7.1. Size:132K  onsemi
 ngd18n45.pdf pdf_icon

NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

 7.2. Size:132K  onsemi
 ngd18n45clbt4g.pdf pdf_icon

NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

MOSTRAR MÁS

Otros transistores... NGB8202AN, NGB8202N, NGB8204N, NGB8206AN, NGB8206N, NGB8207AN, NGB8207N, NGD15N41CL, SGT40N60FD2PN, NGD8201A, NGD8201N, NGD8205N, NGP15N41CL, FID60-06D, FII24N17AH1, FII30-06D, FII30-12E