NGD18N40CLB Todos los transistores

 

NGD18N40CLB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGD18N40CLB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 115 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 430 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 4500 nS
   Coesⓘ - Capacitancia de salida, typ: 75 pF
   Paquete / Cubierta: DPAK
 

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NGD18N40CLB Datasheet (PDF)

 ..1. Size:126K  1
ngd18n40clb.pdf pdf_icon

NGD18N40CLB

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 6.1. Size:126K  onsemi
ngd18n40a.pdf pdf_icon

NGD18N40CLB

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 7.1. Size:132K  onsemi
ngd18n45.pdf pdf_icon

NGD18N40CLB

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

 7.2. Size:132K  onsemi
ngd18n45clbt4g.pdf pdf_icon

NGD18N40CLB

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

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History: NGTB20N120IHS | MMG75W120X6TN

 

 
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