NGD18N40CLB Todos los transistores

 

NGD18N40CLB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD18N40CLB

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115

Tensión colector-emisor (Vce): 400

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 18

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: DPAK-4

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NGD18N40CLB Datasheet (PDF)

2.1. ngd18n40a.pdf Size:126K _igbt

NGD18N40CLB
NGD18N40CLB

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

2.2. ngd18n40a.pdf Size:126K _onsemi

NGD18N40CLB
NGD18N40CLB

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 3.1. ngd18n45.pdf Size:132K _igbt

NGD18N40CLB
NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

3.2. ngd18n45clbt4g.pdf Size:132K _igbt

NGD18N40CLB
NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

 3.3. ngd18n45.pdf Size:132K _onsemi

NGD18N40CLB
NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

3.4. ngd18n45clbt4g.pdf Size:132K _onsemi

NGD18N40CLB
NGD18N40CLB

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http://onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

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