All IGBT. NGD18N40CLB Datasheet

 

NGD18N40CLB IGBT. Datasheet pdf. Equivalent


   Type Designator: NGD18N40CLB
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 4500 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: DPAK

 NGD18N40CLB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGD18N40CLB Datasheet (PDF)

 ..1. Size:126K  1
ngd18n40clb.pdf

NGD18N40CLB
NGD18N40CLB

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 6.1. Size:126K  onsemi
ngd18n40a.pdf

NGD18N40CLB
NGD18N40CLB

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren

 7.1. Size:132K  onsemi
ngd18n45.pdf

NGD18N40CLB
NGD18N40CLB

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

 7.2. Size:132K  onsemi
ngd18n45clbt4g.pdf

NGD18N40CLB
NGD18N40CLB

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ

Datasheet: NGB8202AN , NGB8202N , NGB8204N , NGB8206AN , NGB8206N , NGB8207AN , NGB8207N , NGD15N41CL , MBQ50T65FDSC , NGD8201A , NGD8201N , NGD8205N , NGP15N41CL , FID60-06D , FII24N17AH1 , FII30-06D , FII30-12E .

 

 
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