IXBF12N300 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBF12N300

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 3000 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 140 nS

Coesⓘ - Capacitancia de salida, typ: 56 pF

Encapsulados: ISOPLUS-I4-PAK

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IXBF12N300 datasheet

 ..1. Size:195K  ixys
 ixbf12n300.pdf pdf_icon

IXBF12N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie

 9.1. Size:228K  ixys
 ixbf10n300c.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transi

 9.2. Size:196K  ixys
 ixbf14n300.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF14N300 BIMOSFETTM Monolithic IC90 = 14A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient

 9.3. Size:227K  ixys
 ixbf15n300c.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, VCES = 3000V IXBF15N300C High Frequency, IC110 = 15A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Tran

MOSTRAR MÁS

Otros transistores... IXA27IF1200HJ, IXA30PG1200DHGLB, IXA33IF1200HB, IXA37IF1200HJ, IXA40PG1200DHGLB, IXA45IF1200HB, IXA55I1200HJ, IXA60IF1200NA, RJH60F7BDPQ-A0, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300