All IGBT. IXBF12N300 Datasheet

 

IXBF12N300 Datasheet and Replacement


   Type Designator: IXBF12N300
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 22 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 140 nS
   Coesⓘ - Output Capacitance, typ: 56 pF
   Qg ⓘ - Total Gate Charge, typ: 62 nC
   Package: ISOPLUS-I4-PAK
 

 IXBF12N300 substitution

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IXBF12N300 Datasheet (PDF)

 ..1. Size:195K  ixys
 ixbf12n300.pdf pdf_icon

IXBF12N300

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie

 9.1. Size:228K  ixys
 ixbf10n300c.pdf pdf_icon

IXBF12N300

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF10N300CHigh Frequency,IC110 = 10ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMmbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transi

 9.2. Size:196K  ixys
 ixbf14n300.pdf pdf_icon

IXBF12N300

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF14N300BIMOSFETTM MonolithicIC90 = 14ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient

 9.3. Size:227K  ixys
 ixbf15n300c.pdf pdf_icon

IXBF12N300

Advance Technical InformationHigh Voltage,VCES = 3000VIXBF15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Tran

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Datasheet: IXA27IF1200HJ , IXA30PG1200DHGLB , IXA33IF1200HB , IXA37IF1200HJ , IXA40PG1200DHGLB , IXA45IF1200HB , IXA55I1200HJ , IXA60IF1200NA , STGB10NB37LZ , IXBF20N300 , IXBF32N300 , IXBF40N160 , IXBF42N300 , IXBF55N300 , IXBF9N160G , IXBH10N170 , IXBH12N300 .

Keywords - IXBF12N300 transistor datasheet

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