IXBF12N300 Specs and Replacement

Type Designator: IXBF12N300

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 22 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 140 nS

Coesⓘ - Output Capacitance, typ: 56 pF

Package: ISOPLUS-I4-PAK

 IXBF12N300 Substitution

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IXBF12N300 datasheet

 ..1. Size:195K  ixys
 ixbf12n300.pdf pdf_icon

IXBF12N300

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒

 9.1. Size:228K  ixys
 ixbf10n300c.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, VCES = 3000V IXBF10N300C High Frequency, IC110 = 10A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transi... See More ⇒

 9.2. Size:196K  ixys
 ixbf14n300.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF14N300 BIMOSFETTM Monolithic IC90 = 14A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒

 9.3. Size:227K  ixys
 ixbf15n300c.pdf pdf_icon

IXBF12N300

Advance Technical Information High Voltage, VCES = 3000V IXBF15N300C High Frequency, IC110 = 15A BiMOSFETTM Monolithic VCE(sat) 6.0V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Tran... See More ⇒

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Specs: IXA27IF1200HJ, IXA30PG1200DHGLB, IXA33IF1200HB, IXA37IF1200HJ, IXA40PG1200DHGLB, IXA45IF1200HB, IXA55I1200HJ, IXA60IF1200NA, RJH60F7BDPQ-A0, IXBF20N300, IXBF32N300, IXBF40N160, IXBF42N300, IXBF55N300, IXBF9N160G, IXBH10N170, IXBH12N300

Keywords - IXBF12N300 transistor spec

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