IXBH40N160 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXBH40N160

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 350 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 33 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 6.2 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: TO247

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IXBH40N160 datasheet

 ..1. Size:60K  ixys
 ixbh40n160.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 6.1. Size:60K  ixys
 ixbh40n140.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 6.2. Size:61K  ixys
 ixbh40n140-160.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 9.1. Size:206K  ixys
 ixbh42n250.pdf pdf_icon

IXBH40N160

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 25 V G = Gate C = Collector VGEM Transient 35

MOSTRAR MÁS

Otros transistores... IXBH12N300, IXBH16N170, IXBH16N170A, IXBH20N300, IXBH24N170, IXBH28N170A, IXBH2N250, IXBH32N300, FGH30S130P, IXBH42N170, IXBH42N170A, IXBH5N160G, IXBH6N170, IXBH9N160G, IXBK55N300, IXBK64N250, IXBK75N170