Справочник IGBT. IXBH40N160

 

IXBH40N160 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXBH40N160
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 350 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 33 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 6.2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 8 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 60 nS
   Coesⓘ - Выходная емкость, типовая: 220 pF
   Qgⓘ - Общий заряд затвора, typ: 130 nC
   Тип корпуса: TO247

 Аналог (замена) для IXBH40N160

 

 

IXBH40N160 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixbh40n160.pdf

IXBH40N160 IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 6.1. Size:60K  ixys
 ixbh40n140.pdf

IXBH40N160 IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 6.2. Size:61K  ixys
 ixbh40n140-160.pdf

IXBH40N160 IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 9.1. Size:206K  ixys
 ixbh42n250.pdf

IXBH40N160 IXBH40N160

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

 9.2. Size:116K  ixys
 ixbh42n170a.pdf

IXBH40N160 IXBH40N160

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

 9.3. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf

IXBH40N160 IXBH40N160

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

 9.4. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf

IXBH40N160 IXBH40N160

Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)

 9.5. Size:173K  ixys
 ixbh42n170.pdf

IXBH40N160 IXBH40N160

High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin

 9.6. Size:268K  ixys
 ixbh42n300hv.pdf

IXBH40N160 IXBH40N160

Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans

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