IXBH40N160 - аналоги и описание IGBT

 ..1. Size:60K  ixys
 ixbh40n160.pdf 

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 6.1. Size:60K  ixys
 ixbh40n140.pdf 

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 6.2. Size:61K  ixys
 ixbh40n140-160.pdf 

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 40N160 IC25 = 33 A MOS Transistor VCE(sat) = 6.2 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 International standard package VCES TJ = 25 C to 150 C 140

 9.1. Size:206K  ixys
 ixbh42n250.pdf 

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 25 V G = Gate C = Collector VGEM Transient 35

 9.2. Size:116K  ixys
 ixbh42n170a.pdf 

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 9.3. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf 

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 9.4. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf 

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 9.5. Size:173K  ixys
 ixbh42n170.pdf 

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 9.6. Size:268K  ixys
 ixbh42n300hv.pdf 

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans