All IGBT. IXBH40N160 Datasheet

 

IXBH40N160 Datasheet and Replacement


   Type Designator: IXBH40N160
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXBH40N160 Datasheet (PDF)

 ..1. Size:60K  ixys
 ixbh40n160.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 6.1. Size:60K  ixys
 ixbh40n140.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 6.2. Size:61K  ixys
 ixbh40n140-160.pdf pdf_icon

IXBH40N160

High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140

 9.1. Size:206K  ixys
 ixbh42n250.pdf pdf_icon

IXBH40N160

Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35

SHOW MORE

Datasheet: IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , GT30J122 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - IXBH40N160 transistor datasheet

 IXBH40N160 cross reference
 IXBH40N160 equivalent finder
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