IXBH40N160 IGBT. Datasheet pdf. Equivalent
Type Designator: IXBH40N160
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 33 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Qgⓘ - Total Gate Charge, typ: 130 nC
Package: TO247
IXBH40N160 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBH40N160 Datasheet (PDF)
ixbh40n160.pdf
High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140
ixbh40n140.pdf
High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140
ixbh40n140-160.pdf
High Voltage BIMOSFETTM IXBH 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 6.2 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features40N140 40N160 International standard packageVCES TJ = 25C to 150C 140
ixbh42n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35
ixbh42n170a.pdf
Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)
ixbh42n170 ixbt42n170.pdf
High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin
ixbh42n170a ixbt42n170a.pdf
Advance Technical InformationBIMOSFETTM MonolithicIXBH 42N170A VCES = 1700 VBipolar MOS TransistorIXBT 42N170A IC25 = 42 AVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25C42 ATO-247 AD (IXBH)
ixbh42n170.pdf
High Voltage, High GainVCES = 1700VIXBH42N170BIMOSFETTM MonolithicIXBT42N170IC90 = 42ABipolar MOS TransistorVCE(sat) 2.8VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)CEIC25 TC = 25C 80 AILRMS Termin
ixbh42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
Datasheet: IXBH12N300 , IXBH16N170 , IXBH16N170A , IXBH20N300 , IXBH24N170 , IXBH28N170A , IXBH2N250 , IXBH32N300 , IRG4PC50U , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , IXBK75N170 .
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