IXBK75N170 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXBK75N170
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1040 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1700 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 160 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Qgⓘ - Carga total de la puerta, typ: 350 nC
Paquete / Cubierta: TO264
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IXBK75N170 Datasheet (PDF)
ixbk75n170 ixbx75n170.pdf
Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt
ixbk75n170.pdf
Preliminary Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170Bipolar MOS Transistor IC110 = 75AIXBX75N170VCE(sat) 3.1VTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V TabEVGEM Transient 30 VIC25 TC = 25C (Chip Capabilitt
ixbk75n170a.pdf
Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C
ixbk75n170a ixbx75n170a.pdf
Advance Technical InformationBiMOSFETTM Monolithic VCES = 1700VIXBK75N170ABipolar MOS Transistor IC90 = 65AIXBX75N170AVCE(sat) 6.00Vtfi(typ) = 60nsTO-264 (IXBK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGCVGES Continuous 20 V (TAB)EVGEM Transient 30 VIC25 TC = 25C
Otros transistores... IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , GT60N321 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2