All IGBT. IXBK75N170 Datasheet

 

IXBK75N170 IGBT. Datasheet pdf. Equivalent

Type Designator: IXBK75N170

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1700V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.1V

Maximum Collector Current |Ic|, A: 200A

Package: TO264

IXBK75N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBK75N170 Datasheet (PDF)

1.1. ixbk75n170 ixbx75n170.pdf Size:179K _ixys

IXBK75N170
IXBK75N170

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 ? VCE(sat) ? ? 3.1V ? ? TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M? 1700 V G C VGES Continuous 20 V Tab E VGEM Transient 30 V IC25 TC = 25C (Chip Capabilitty) 200 A PLUS247TM (

1.2. ixbk75n170a ixbx75n170a.pdf Size:194K _ixys

IXBK75N170
IXBK75N170

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A ? VCE(sat) ? ? 6.00V ? ? tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M? 1700 V G C VGES Continuous 20 V (TAB) E VGEM Transient 30 V IC25 TC = 25C 110 A PLUS247TM (IX

1.3. ixbk75n170.pdf Size:177K _igbt

IXBK75N170
IXBK75N170

Preliminary Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170 Bipolar MOS Transistor IC110 = 75A IXBX75N170 ≤ VCE(sat) ≤ ≤ 3.1V ≤ ≤ TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C VGES Continuous ±20 V Tab E VGEM Transient ±30 V IC25 TC = 25°C (Chip Capabilitt

1.4. ixbk75n170a.pdf Size:192K _igbt

IXBK75N170
IXBK75N170

Advance Technical Information BiMOSFETTM Monolithic VCES = 1700V IXBK75N170A Bipolar MOS Transistor IC90 = 65A IXBX75N170A ≤ VCE(sat) ≤ ≤ 6.00V ≤ ≤ tfi(typ) = 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V G C VGES Continuous ±20 V (TAB) E VGEM Transient ±30 V IC25 TC = 25°C

Datasheet: IXBH40N160 , IXBH42N170 , IXBH42N170A , IXBH5N160G , IXBH6N170 , IXBH9N160G , IXBK55N300 , IXBK64N250 , G20N60B3 , IXBK75N170A , IXBL64N250 , IXBN42N170A , IXBN75N170 , IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 .

 


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