IXBT24N170 Todos los transistores

 ..1. Size:179K  ixys
 ixbh24n170 ixbt24n170.pdf

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor VCE(sat) 2.5V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C C (TAB) E VGEM Transient 30 V IC

 ..2. Size:177K  ixys
 ixbt24n170.pdf

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor VCE(sat) 2.5V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C C (TAB) E VGEM Transient 30 V IC

 9.1. Size:180K  ixys
 ixbt2n250.pdf

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

 9.2. Size:174K  ixys
 ixbt20n300.pdf

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V

 9.3. Size:198K  ixys
 ixbt20n300hv.pdf

Advance Technical Information High Voltage, High Gain IXBT20N300HV VCES = 3000V BIMOSFETTM Monolithic IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C 50 A G

 9.4. Size:288K  ixys
 ixbt20n360hv.pdf

Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.4V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3600 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V TO-247HV (IXBH) VGEM

 9.5. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf

ADVANCE TECHNICAL INFORMATION VCES = 1700 V High Voltage, High Gain IXBH 28N170A BIMOSFETTM Monolithic IC25 = 30 A IXBT 28N170A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25

 9.6. Size:253K  ixys
 ixbt22n300hv.pdf

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM