IXBT24N170 IGBT. Datasheet pdf. Equivalent
Type Designator: IXBT24N170
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 163 pF
Qgⓘ - Total Gate Charge, typ: 140 nC
Package: TO268
IXBT24N170 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBT24N170 Datasheet (PDF)
ixbh24n170 ixbt24n170.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBH24N170BIMOSFETTM MonolithicIXBT24N170IC110 = 24ABipolar MOS TransistorVCE(sat) 2.5VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VCC (TAB)EVGEM Transient 30 VIC
ixbt24n170.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBH24N170BIMOSFETTM MonolithicIXBT24N170IC110 = 24ABipolar MOS TransistorVCE(sat) 2.5VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VCC (TAB)EVGEM Transient 30 VIC
ixbt2n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC
ixbt20n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixbt20n300hv.pdf
Advance Technical InformationHigh Voltage, High GainIXBT20N300HV VCES = 3000VBIMOSFETTM MonolithicIC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-268Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 VEVGES Continuous 20 V C (Tab)VGEM Transient 30 VIC25 TC = 25C 50 A G
ixbt20n360hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
ixbh28n170a ixbt28n170a.pdf
ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25
ixbt22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
Datasheet: IXBN75N170A , IXBP5N160G , IXBR42N170 , IXBT10N170 , IXBT12N300 , IXBT16N170 , IXBT16N170A , IXBT20N300 , GT30F132 , IXBT28N170A , IXBT2N250 , IXBT32N300 , IXBT42N170 , IXBT42N170A , IXBT6N170 , IXBX25N250 , IXBX55N300 .
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