IXGA30N120B3 Todos los transistores

 

IXGA30N120B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGA30N120B3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.96 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 37 nS
   Coesⓘ - Capacitancia de salida, typ: 120 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IXGA30N120B3 Datasheet (PDF)

 ..1. Size:209K  ixys
ixga30n120b3.pdf pdf_icon

IXGA30N120B3

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

 7.1. Size:287K  ixys
ixga30n60c3d4.pdf pdf_icon

IXGA30N120B3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.2. Size:269K  ixys
ixga30n60c3.pdf pdf_icon

IXGA30N120B3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.3. Size:278K  ixys
ixga30n60c3c1.pdf pdf_icon

IXGA30N120B3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

Otros transistores... IXGA16N60C2 , IXGA16N60C2D1 , IXGA20N100A3 , IXGA20N120 , IXGA20N120A3 , IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , SGT50T65FD1PN , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , IXGA36N60A3 , IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 .

History: APTGT75SK170D1 | IKB40N65ES5 | FD800R33KF2C-K | VS-GB100TP120N | CM400DY-24NF | SKM150GB174D | IGW75N60H3

 

 
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