All IGBT. IXGA30N120B3 Datasheet

 

IXGA30N120B3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGA30N120B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.96 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 87 nC
   Package: TO263

 IXGA30N120B3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGA30N120B3 Datasheet (PDF)

 ..1. Size:209K  ixys
 ixga30n120b3.pdf

IXGA30N120B3 IXGA30N120B3

VCES = 1200VGenX3TM 1200V IXGA30N120B3IC110 = 30AIGBTs IXGP30N120B3VCE(sat) 3.5VIXGH30N120B3tfi(typ) = 204nsHigh-Speed Low-Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Tra

 7.1. Size:287K  ixys
 ixga30n60c3d4.pdf

IXGA30N120B3 IXGA30N120B3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25C to 150C 600 V C (Tab) VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.2. Size:269K  ixys
 ixga30n60c3.pdf

IXGA30N120B3 IXGA30N120B3

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.3. Size:278K  ixys
 ixga30n60c3c1.pdf

IXGA30N120B3 IXGA30N120B3

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

Datasheet: IXGA16N60C2 , IXGA16N60C2D1 , IXGA20N100A3 , IXGA20N120 , IXGA20N120A3 , IXGA20N120B3 , IXGA24N120C3 , IXGA24N60C , SGT40N60FD2PN , IXGA30N60C3 , IXGA30N60C3C1 , IXGA30N60C3D4 , IXGA36N60A3 , IXGA42N30C3 , IXGA48N60A3 , IXGA48N60B3 , IXGA48N60C3 .

 

 
Back to Top