CT30VS-8 Todos los transistores

 

CT30VS-8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CT30VS-8
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 180(pulse) A
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   Paquete / Cubierta: TO220S
     - Selección de transistores por parámetros

 

CT30VS-8 Datasheet (PDF)

 ..1. Size:28K  mitsubishi
 ct30vs-8.pdf pdf_icon

CT30VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30VS-8STROBE FLASHER USECT30VS-8 OUTLINE DRAWING Dimensions in mmr 10.5MAX. 4.51.3+0.30 0150.50.8q w ewrq GATEq w COLLECTORe EMITTERr COLLECTOReVCES ............................................................................... 400VICM ...................................................................

 9.1. Size:28K  mitsubishi
 ct30vm-8.pdf pdf_icon

CT30VS-8

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30VM-8STROBE FLASHER USECT30VM-8 OUTLINE DRAWING Dimensions in mm10.5MAX.r1.310.5 0.52.5 2.5q w ewrq GATEq w COLLECTORe EMITTERr COLLECTORVCES ................................................................................400VeICM ...............................................................................

Otros transistores... CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , MBQ50T65FDSC , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 .

History: FGH75T65UPD-F155 | IGW75N60H3 | FD800R33KF2C-K | IKB40N65ES5 | CM400DY-24NF | VS-GB100TP120N | SKM150GB174D

 

 
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