CT30VS-8 Datasheet and Replacement
Type Designator: CT30VS-8
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 180(pulse) A @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO220S
- IGBT Cross-Reference
CT30VS-8 Datasheet (PDF)
ct30vs-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30VS-8STROBE FLASHER USECT30VS-8 OUTLINE DRAWING Dimensions in mmr 10.5MAX. 4.51.3+0.30 0150.50.8q w ewrq GATEq w COLLECTORe EMITTERr COLLECTOReVCES ............................................................................... 400VICM ...................................................................
ct30vm-8.pdf

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTORCT30VM-8STROBE FLASHER USECT30VM-8 OUTLINE DRAWING Dimensions in mm10.5MAX.r1.310.5 0.52.5 2.5q w ewrq GATEq w COLLECTORe EMITTERr COLLECTORVCES ................................................................................400VeICM ...............................................................................
Datasheet: CT20VML-8 , CT20VS-8 , CT20VSL-8 , CT25AS-8 , CT25ASJ-8 , CT30SM-12 , CT30TM-8 , CT30VM-8 , MBQ50T65FDSC , CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 .
History: 2MBI100UA-120 | SKM150GB12T4
Keywords - CT30VS-8 transistor datasheet
CT30VS-8 cross reference
CT30VS-8 equivalent finder
CT30VS-8 lookup
CT30VS-8 substitution
CT30VS-8 replacement
History: 2MBI100UA-120 | SKM150GB12T4



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