IXGH12N120A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH12N120A3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 22 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 140 nS
Coesⓘ - Capacitancia de salida, typ: 30 pF
Qgⓘ - Carga total de la puerta, typ: 20.4 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IXGH12N120A3 - IGBT
IXGH12N120A3 Datasheet (PDF)
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG
ixgh12n100u1.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM
ixgh12n100au1.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM
ixgh12n100.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
ixgh12n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
ixgh12n100 ixgh12n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBTHigh Speed IGBTIXGH 12N100 1000 V 24 A 3.5 VIXGH 12N100A 1000 V 24 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C24 AG = Gate C = CollectorIC90 TC = 90C12 AE = Emitter TAB =
Otros transistores... IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , YGW40N65F1A1 , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2