All IGBT. IXGH12N120A3 Datasheet

 

IXGH12N120A3 Datasheet and Replacement


   Type Designator: IXGH12N120A3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 22 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 140 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXGH12N120A3 Datasheet (PDF)

 ..1. Size:201K  ixys
 ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf pdf_icon

IXGH12N120A3

GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG

 ..2. Size:199K  ixys
 ixgh12n120a3.pdf pdf_icon

IXGH12N120A3

GenX3TM 1200V VCES = 1200VIXGA12N120A3IGBTs IC90 = 12AIXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3High Surge CurrentTO-263 AA (IXGA)Ultra-Low Vsat PT IGBTs forup to 3kHz SwitchingGSD (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VG

 6.1. Size:119K  ixys
 ixgh12n100u1.pdf pdf_icon

IXGH12N120A3

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

 6.2. Size:119K  ixys
 ixgh12n100au1.pdf pdf_icon

IXGH12N120A3

VCES IC25 VCE(sat)Low VCE(sat) IGBT with DiodeHigh Speed IGBT with DiodeIXGH 12N100U1 1000 V 24 A 3.5 VCombi Pack IXGH 12N100AU1 1000 V 24 A 4.0 VSymbol Test Conditions Maximum RatingsTO-247ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GCIC25 TC = 25C24 AEIC90 TC = 90C12 AICM

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Datasheet: IXGF36N300 , IXGH100N30B3 , IXGH100N30C3 , IXGH10N170 , IXGH10N170A , IXGH10N300 , IXGH120N30B3 , IXGH120N30C3 , FGL60N100BNTD , IXGH15N120B2D1 , IXGH16N170 , IXGH16N170A , IXGH16N170AH1 , IXGH16N60B2D1 , IXGH16N60C2D1 , IXGH20N100A3 , IXGH20N120 .

History: 1MB15D-060 | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | HGTD10N50F1 | 70MT060WSP | IXGT40N60C2D1

Keywords - IXGH12N120A3 transistor datasheet

 IXGH12N120A3 cross reference
 IXGH12N120A3 equivalent finder
 IXGH12N120A3 lookup
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