IXGH32N90B2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH32N90B2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 300 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 22 nS
Coesⓘ - Capacitancia de salida, typ: 121 pF
Encapsulados: TO247
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IXGH32N90B2 datasheet
..1. Size:202K ixys
ixgh32n90b2 ixgt32n90b2.pdf 
Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C (limited by leads)
..2. Size:199K ixys
ixgh32n90b2.pdf
Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C (limited by leads)
0.1. Size:219K ixys
ixgh32n90b2d1 ixgt32n90b2d1.pdf
Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient
0.2. Size:217K ixys
ixgh32n90b2d1.pdf
Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient
7.1. Size:572K ixys
ixgh32n170a ixgt32n170a.pdf
IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A
7.3. Size:573K ixys
ixgh32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC
7.4. Size:48K ixys
ixgh32n60au1 ixgh32n60au1s.pdf
IXGH 32N60AU1 IXGH 32N60AU1S VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT with Diode VCE(sat) = 2.9V Combi Pack tfi = 125 ns TO-247 SMD (32N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB)
7.5. Size:48K ixys
ixgh32n60a.pdf
IXGH 32N60A IXGH 32N60AS VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT VCE(sat) = 2.9 V tfi = 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25 C to 150 C 600 V G E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB) G ICM TC = 25 C, 1 ms 120
7.6. Size:194K ixys
ixgh32n120a3.pdf
GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 VCE(sat) 2.35V Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V C (Tab) VGES Continuous 20 V TO-247 (IXGH) VGEM Transient 30 V IC25 TC = 25 C 75
7.7. Size:569K ixys
ixgh32n170a.pdf
IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A
7.8. Size:81K ixys
ixgh32n60c.pdf
IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C60 A TO-247 AD (IXGH) IC110 TC = 110 C32 A ICM TC =
7.9. Size:120K ixys
ixgh32n100a3.pdf
Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A VCE(sat) 2.2V Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V C E VGES Continuous 20 V TO-268 (
7.10. Size:160K ixys
ixgh32n60cd1.pdf
IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G VGES Continuous 20 V C (TAB) C VGEM Transient 30 V E IC25 TC = 25 C60 A IC90 TC = 90 C32 A TO-268 (D
7.11. Size:125K ixys
ixgh32n60bd1.pdf
IXGH 32N60B HiPerFASTTM IGBT VCES = 600 V IXGT 32N60B IC25 = 60 A IXGH 32N60BD1 VCE(sat) = 2.3 V IXGT 32N60BD1 tfi(typ) = 85 ns (D1) Symbol Test Conditions Maximum Ratings TO-268 (IXGT) G VCES TJ = 25 C to 150 C 600 V E C VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) VGES Continuous 20 V TO-247 AD VGEM Transient 30 V (IXGH) IC25 TC = 25 C60 A IC90 TC = 90 C3
7.13. Size:577K ixys
ixgh32n170 ixgt32n170.pdf
High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC
7.14. Size:137K ixys
ixgh32n60bu1.pdf
IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C60 A E = Emitter, TAB = Collector IC90 TC = 90 C32 A IC
7.15. Size:34K ixys
ixgh32n60b.pdf
HiPerFASTTM IGBT IXGH32N60B VCES = 600 V IC25 = 60 A VCE(sat) = 2.5 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C60 A E IC90 TC = 90 C32 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 120 A E = Emitter, TAB = Col
7.16. Size:48K ixys
ixgh32n60as.pdf
IXGH 32N60A IXGH 32N60AS VCES = 600 V IC25 = 60 A HiPerFASTTM IGBT VCE(sat) = 2.9 V tfi = 125 ns TO-247 SMD (32N60AS) Symbol Test Conditions Maximum Ratings C (TAB) VCES TJ = 25 C to 150 C 600 V G E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 AD VGEM Transient 30 V IC25 TC = 25 C60 A IC90 TC = 90 C32 A C (TAB) G ICM TC = 25 C, 1 ms 120
Otros transistores... IXGH30N60C2D1, IXGH30N60C3, IXGH30N60C3C1, IXGH30N60C3D1, IXGH32N100A3, IXGH32N120A3, IXGH32N170, IXGH32N170A, SGT50T65FD1PT, IXGH32N90B2D1, IXGH34N60B2, IXGH35N120B, IXGH35N120C, IXGH36N60A3, IXGH36N60A3D4, IXGH36N60B3, IXGH36N60B3C1
