All IGBT. IXGH32N90B2 Datasheet

 

IXGH32N90B2 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH32N90B2

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7V

Maximum Collector Current |Ic|, A: 64A

Rise Time, nS: 165

Package: TO247

IXGH32N90B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH32N90B2 Datasheet (PDF)

1.1. ixgh32n90b2 ixgt32n90b2.pdf Size:202K _ixys

IXGH32N90B2
IXGH32N90B2

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C (limited by leads) 64 A TO-26

1.2. ixgh32n90b2d1 ixgt32n90b2d1.pdf Size:219K _ixys

IXGH32N90B2
IXGH32N90B2

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 MW 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E

1.3. ixgh32n90b2d1.pdf Size:217K _igbt

IXGH32N90B2
IXGH32N90B2

Advance Technical Information VCES = 900 V IXGH 32N90B2D1 HiPerFASTTM IGBT IC25 = 64 A IXGT 32N90B2D1 with Fast Diode VCE(sat) = 2.7 V tfi typ = 150 ns B2-Class High Speed IGBTs with Ultrafast Diode Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 900 V C (TAB) VGES Continuous ±20 V G C VGEM Transient

1.4. ixgh32n90b2.pdf Size:199K _igbt

IXGH32N90B2
IXGH32N90B2

Advance Technical Information IXGH 32N90B2 VCES = 900 V HiPerFASTTM IGBT IXGT 32N90B2 IC25 = 64 A B2-Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 150 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C (limited by leads)

Datasheet: IXGH30N60C2D1 , IXGH30N60C3 , IXGH30N60C3C1 , IXGH30N60C3D1 , IXGH32N100A3 , IXGH32N120A3 , IXGH32N170 , IXGH32N170A , IRG4BC30W-S , IXGH32N90B2D1 , IXGH34N60B2 , IXGH35N120B , IXGH35N120C , IXGH36N60A3 , IXGH36N60A3D4 , IXGH36N60B3 , IXGH36N60B3C1 .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |