VBGN40N120 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBGN40N120
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 357 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 45 nS
Coesⓘ - Capacitancia de salida, typ: 195 pF
Encapsulados: TO247
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VBGN40N120 datasheet
vbgn40n120.pdf
VBGN40N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced
vbgn40n60.pdf
VBGN40N60 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us
Otros transistores... CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , CRG15T120BNR3S , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 .
History: VBGN40N60 | IKW75N60H3
History: VBGN40N60 | IKW75N60H3
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