VBGN40N120 Todos los transistores

 

VBGN40N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VBGN40N120
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 357 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 195 pF
   Paquete / Cubierta: TO247
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VBGN40N120 Datasheet (PDF)

 ..1. Size:1470K  cn vbsemi
 vbgn40n120.pdf pdf_icon

VBGN40N120

VBGN40N120www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced

 7.1. Size:1463K  cn vbsemi
 vbgn40n60.pdf pdf_icon

VBGN40N120

VBGN40N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us

Otros transistores... CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , JT075N065WED , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 .

History: IXXK200N65B4 | IQGB228N120GB4 | BSM75GAL120DN2 | FGH75T65SQDT | SRE100N065FSUD6 | 2MBI200TA-060 | MMG25H120XB6TN

 

 
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