VBGN40N120 Specs and Replacement
Type Designator: VBGN40N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 357 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 195 pF
Package: TO247
VBGN40N120 Substitution - IGBT ⓘ Cross-Reference Search
VBGN40N120 datasheet
vbgn40n120.pdf
VBGN40N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced... See More ⇒
vbgn40n60.pdf
VBGN40N60 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 10us ... See More ⇒
Specs: CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , CRG15T120BNR3S , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 .
History: VBGN40N60
Keywords - VBGN40N120 transistor spec
VBGN40N120 cross reference
VBGN40N120 equivalent finder
VBGN40N120 lookup
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VBGN40N120 replacement
History: VBGN40N60
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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