All IGBT. VBGN40N120 Datasheet

 

VBGN40N120 IGBT. Datasheet pdf. Equivalent


   Type Designator: VBGN40N120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 357
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 45
   Collector Capacity (Cc), typ, pF: 195
   Total Gate Charge (Qg), typ, nC: 230
   Package: TO247

 VBGN40N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VBGN40N120 Datasheet (PDF)

 ..1. Size:1470K  cn vbsemi
 vbgn40n120.pdf

VBGN40N120 VBGN40N120

VBGN40N120www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh system efficiencyShort Circuit Withstand Times 10usExtremely enhanced

 7.1. Size:1463K  cn vbsemi
 vbgn40n60.pdf

VBGN40N120 VBGN40N120

VBGN40N60www.VBsemi.comGeneral DescriptionVBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and short circuit ruggedness.It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Times 10us

Datasheet: CT35SM-8 , CT40TMH-8 , CT60AM-18B , CT60AM-18F , CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , IRG7R313U , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 .

 

 
Back to Top