IXGH56N60B3D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH56N60B3D1 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 330 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.49 V @25℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 220 pF
Encapsulados: TO247
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IXGH56N60B3D1 datasheet
..1. Size:199K ixys
ixgh56n60b3d1.pdf 
VCES = 600V GenX3TM 600V IGBT IXGH56N60B3D1 IC110 = 56A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C 56 A C (TAB) E ICM TC = 25 C, 1ms 350 A
3.1. Size:179K ixys
ixgh56n60b3.pdf
Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60B3 IC110 = 56A VCE(sat) 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collecto
5.1. Size:175K ixys
ixgh56n60a3.pdf
Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60A3 IC110 = 56A VCE(sat) 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector
9.1. Size:64K ixys
ixgh50n60a.pdf
IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2
9.2. Size:158K ixys
ixgh50n90b2.pdf
Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit
9.4. Size:218K ixys
ixgh50n60b4.pdf
VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C 1
9.5. Size:216K ixys
ixgh50n60c4.pdf
VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C C (Tab) E IC25 TC = 25 C
9.6. Size:162K ixys
ixgh50n90b2 ixgt50n90b2.pdf
Advance Technical Information VCES = 900 V IXGH 50N90B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N90B2 VCE(sat) = 2.7 V tfi typ = 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limit
9.7. Size:169K ixys
ixgh50n120c3.pdf
Preliminary Technical Information TM VCES = 1200V GenX3 1200V IGBT IXGH50N120C3 IC110 = 50A VCE(sat) 4.2V High speed PT IGBTs tfi(typ) = 64ns for 20 - 50 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G TAB C VGEM Transient 30 V E IC
9.8. Size:198K ixys
ixgh50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transien
9.9. Size:585K ixys
ixgh50n60b2 ixgt50n60b2.pdf
VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11
9.10. Size:181K ixys
ixgh50n60b.pdf
IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le
9.11. Size:203K ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transien
9.12. Size:584K ixys
ixgh50n60c2.pdf
Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by
9.13. Size:198K ixys
ixgh50n60b4d1.pdf
VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 100 A Tab IC
9.14. Size:583K ixys
ixgh50n60b2.pdf
VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11
9.15. Size:586K ixys
ixgh50n60c2 ixgt50n60c2.pdf
Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by
9.16. Size:64K ixys
ixgh50n60as.pdf
IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2
Otros transistores... IXGH50N60B4D1, IXGH50N60C2, IXGH50N60C4, IXGH50N60C4D1, IXGH50N90B2, IXGH50N90B2D1, IXGH56N60A3, IXGH56N60B3, IRG4PC50W, IXGH60N30C3, IXGH60N60B2, IXGH60N60C2, IXGH60N60C3, IXGH60N60C3D1, IXGH64N60A3, IXGH64N60B3, IXGH6N170
