IXGH56N60B3D1 Todos los transistores

 

IXGH56N60B3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH56N60B3D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 330 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.49 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 220 pF
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IXGH56N60B3D1 IGBT

   - Selección ⓘ de transistores por parámetros

 

IXGH56N60B3D1 PDF specs

 ..1. Size:199K  ixys
ixgh56n60b3d1.pdf pdf_icon

IXGH56N60B3D1

VCES = 600V GenX3TM 600V IGBT IXGH56N60B3D1 IC110 = 56A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C 56 A C (TAB) E ICM TC = 25 C, 1ms 350 A... See More ⇒

 3.1. Size:179K  ixys
ixgh56n60b3.pdf pdf_icon

IXGH56N60B3D1

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60B3 IC110 = 56A VCE(sat) 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collecto... See More ⇒

 5.1. Size:175K  ixys
ixgh56n60a3.pdf pdf_icon

IXGH56N60B3D1

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60A3 IC110 = 56A VCE(sat) 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector ... See More ⇒

 9.1. Size:64K  ixys
ixgh50n60a.pdf pdf_icon

IXGH56N60B3D1

IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2... See More ⇒

Otros transistores... IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , RJH60F7BDPQ-A0 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 .

 

 
Back to Top

 


 
.