IXGH56N60B3D1 PDF and Equivalents Search

 

IXGH56N60B3D1 Specs and Replacement


   Type Designator: IXGH56N60B3D1
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 130 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.49 V @25℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247
 

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IXGH56N60B3D1 datasheet

 ..1. Size:199K  ixys
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IXGH56N60B3D1

VCES = 600V GenX3TM 600V IGBT IXGH56N60B3D1 IC110 = 56A VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC110 TC = 110 C 56 A C (TAB) E ICM TC = 25 C, 1ms 350 A... See More ⇒

 3.1. Size:179K  ixys
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IXGH56N60B3D1

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60B3 IC110 = 56A VCE(sat) 1.80V Medium-Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collecto... See More ⇒

 5.1. Size:175K  ixys
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IXGH56N60B3D1

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGH56N60A3 IC110 = 56A VCE(sat) 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G CD ES (TAB) VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector ... See More ⇒

 9.1. Size:64K  ixys
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IXGH56N60B3D1

IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) G VGES Continuous 20 V E VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD IC90 TC = 90 C50 A (50N60A) ICM TC = 2... See More ⇒

Specs: IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , RJH60F7BDPQ-A0 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 .

Keywords - IXGH56N60B3D1 transistor spec

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