IXGH56N60B3D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGH56N60B3D1
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 330 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 130 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.49 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 41 nS
Coesⓘ - Выходная емкость, типовая: 220 pF
Qgⓘ - Общий заряд затвора, typ: 138 nC
Тип корпуса: TO247
Аналог (замена) для IXGH56N60B3D1
IXGH56N60B3D1 Datasheet (PDF)
ixgh56n60b3d1.pdf
VCES = 600VGenX3TM 600V IGBTIXGH56N60B3D1IC110 = 56AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C 56 AC (TAB)EICM TC = 25C, 1ms 350 A
ixgh56n60b3.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60B3IC110 = 56AVCE(sat) 1.80VMedium-Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collecto
ixgh56n60a3.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60A3IC110 = 56AVCE(sat) 1.35VUltra-Low Vsat PT IGBT for up to5 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collector
ixgh50n60a.pdf
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
ixgh50n90b2.pdf
Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit
ixgh50n60c4d1.pdf
VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110
ixgh50n60b4.pdf
VCES = 600VHigh-Gain IGBTs IXGA50N60B4IC110 = 50AIXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4Low-Vsat PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C 1
ixgh50n60c4.pdf
VCES = 600VHigh-Gain IGBTs IXGA50N60C4IC110 = 46AIXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4High-Speed PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C
ixgh50n90b2 ixgt50n90b2.pdf
Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit
ixgh50n120c3.pdf
Preliminary Technical InformationTMVCES = 1200VGenX3 1200V IGBT IXGH50N120C3IC110 = 50AVCE(sat) 4.2VHigh speed PT IGBTstfi(typ) = 64nsfor 20 - 50 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V GTABCVGEM Transient 30 V EIC
ixgh50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
ixgh50n60b2 ixgt50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
ixgh50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
ixgh50n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
ixgh50n60b4d1.pdf
VCES = 600VHigh-Gain IGBTs IXGH50N60B4D1IC110 = 50Aw/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTsTO-247 (IXGH)GC TabESymbol Test Conditions Maximum RatingsTO-3P (IXGQ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 100 ATabIC
ixgh50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
ixgh50n60c2 ixgt50n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
ixgh50n60as.pdf
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
Другие IGBT... IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , IRGP4066D , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 , IXGH60N60C3D1 , IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2