VBGT15N120P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBGT15N120P
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 190 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Qgⓘ - Carga total de la puerta, typ: 90 nC
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de VBGT15N120P IGBT
VBGT15N120P Datasheet (PDF)
vbgt15n120p.pdf
VBGT15N120Pwww.VBsemi.comGeneral Description VBsemi IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh system efficiencySoft current turn-off waveformsExtremely enhanced avalanche capabilityMAXIMUM RATING (Ta=25)
vbgt15n120.pdf
VBGT15N120www.VBsemi.comGeneral Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energyefficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanc
vbgt15n135.pdf
VBGT15N135www.VBsemi.comGeneral Description VBsemi IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _+_+_+_+FEATURES _+High speed switching _+_+High system efficiency_+_+Soft current turn-off waveforms_+_Extreme
Otros transistores... CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , TGAN60N60F2DS , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 .
History: MMG100J120UZ6TC
History: MMG100J120UZ6TC
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
ss8050 | irfp4668 | mpsa56 | c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n