All IGBT. G10N50C1 Datasheet

 

G10N50C1 IGBT. Datasheet pdf. Equivalent

Type Designator: G10N50C1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 10

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO220

G10N50C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

G10N50C1 Datasheet (PDF)

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Datasheet: CT60AM-20 , CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , G10N40 , G10N40C1 , G10N40E1 , G10N50 , IRG7SC28U , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 .

 

 
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