IXGN82N120C3H1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGN82N120C3H1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 595 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃

trⓘ - Tiempo de subida, typ: 77 nS

Coesⓘ - Capacitancia de salida, typ: 685 pF

Encapsulados: SOT227B

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IXGN82N120C3H1 datasheet

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IXGN82N120C3H1

Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120C3H1 IC110 = 58A IGBT w/ Diode VCE(sat) 3.9V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V E

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IXGN82N120C3H1

Advance Technical Information VCES = 1200V GenX3TM 1200V IXGN82N120B3H1 IC110 = 64A IGBT w/ Diode VCE(sat) 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 1200 V G VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient

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 ixgn80n60a2d1.pdf pdf_icon

IXGN82N120C3H1

Advanced Technical Data IXGN 80N60A2 VCES = 600 V IGBT IXGN 80N60A2D1 IC25 = 160 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz E D1 Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E153432 E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 160 A C IC110 TC =

Otros transistores... IXGN400N60A3, IXGN400N60B3, IXGN50N120C3H1, IXGN60N60C2, IXGN60N60C2D1, IXGN72N60A3, IXGN72N60C3H1, IXGN82N120B3H1, BT40T60ANF, IXGP12N120A2, IXGP12N120A3, IXGP12N60B, IXGP14N120B, IXGP15N120B2, IXGP15N120C, IXGP16N60B2, IXGP16N60B2D1