IXGN82N120C3H1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN82N120C3H1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 595 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 130 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 77 nS
Coesⓘ - Output Capacitance, typ: 685 pF
Qgⓘ - Total Gate Charge, typ: 340 nC
Package: SOT227B
IXGN82N120C3H1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN82N120C3H1 Datasheet (PDF)
ixgn82n120c3h1.pdf
Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN82N120C3H1IC110 = 58AIGBT w/ DiodeVCE(sat) 3.9VHigh-Speed PT IGBT for20-50 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VE
ixgn82n120b3h1.pdf
Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN82N120B3H1IC110 = 64AIGBT w/ DiodeVCE(sat) 3.2VHigh-Speed Low-Vsat PT IGBTfor 3-20 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient
ixgn80n60a2d1.pdf
Advanced Technical DataIXGN 80N60A2 VCES = 600 VIGBTIXGN 80N60A2D1 IC25 = 160 AOptimized for Switching VCE(sat) = 1.35 Vup to 5 kHzE D1Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E153432E VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 160 ACIC110 TC =
Datasheet: IXGN400N60A3 , IXGN400N60B3 , IXGN50N120C3H1 , IXGN60N60C2 , IXGN60N60C2D1 , IXGN72N60A3 , IXGN72N60C3H1 , IXGN82N120B3H1 , IHW20N120R3 , IXGP12N120A2 , IXGP12N120A3 , IXGP12N60B , IXGP14N120B , IXGP15N120B2 , IXGP15N120C , IXGP16N60B2 , IXGP16N60B2D1 .
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