IXGP24N60C - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP24N60C
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 150
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 48
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 25
Capacitancia de salida (Cc), typ, pF: 120
Carga total de la puerta (Qg), typ, nC: 55
Paquete / Cubierta: TO220
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IXGP24N60C Datasheet (PDF)
ixgp24n60c.pdf
HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC
ixga24n60c ixgp24n60c.pdf
HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC
ixgp24n60c4.pdf
Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX
ixgp24n60c4d1.pdf
Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP24N60C4D1IC110 = 24Aw/ Diode VCE(sat) 2.70V tfi(typ) = 44nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector
ixgp24n120c3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBT IXGA24N120C3IC25 = 48AIXGH24N120C3VCE(sat) 4.2VIXGP24N120C3 High speed PT IGBTs fortfi(typ) = 110ns10-50kHz SwitchingTO-263 (IXGA)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGEVGES Continuous 20 V C (TAB)V
Otros transistores... IXGP16N60B2D1 , IXGP16N60C2 , IXGP16N60C2D1 , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 , IXGP24N120C3 , SGH80N60UFD , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , IXGP2N100A , IXGP30N120B3 , IXGP30N60B2 , IXGP30N60B4D1 , IXGP30N60C2 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ