All IGBT. IXGP24N60C Datasheet

 

IXGP24N60C Datasheet and Replacement


   Type Designator: IXGP24N60C
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 48 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qg ⓘ - Total Gate Charge, typ: 55 nC
   Package: TO220
 

 IXGP24N60C substitution

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IXGP24N60C Datasheet (PDF)

 ..1. Size:98K  ixys
 ixgp24n60c.pdf pdf_icon

IXGP24N60C

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 ..2. Size:100K  ixys
 ixga24n60c ixgp24n60c.pdf pdf_icon

IXGP24N60C

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 0.1. Size:92K  ixys
 ixgp24n60c4.pdf pdf_icon

IXGP24N60C

Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX

 0.2. Size:84K  ixys
 ixgp24n60c4d1.pdf pdf_icon

IXGP24N60C

Preliminary Technical InformationVCES = 600VHigh-Gain IGBT IXGP24N60C4D1IC110 = 24Aw/ Diode VCE(sat) 2.70V tfi(typ) = 44nsHigh-Speed PT Trench IGBTTO-220Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCTabEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 V G = Gate C = Collector

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Datasheet: IXGP16N60B2D1 , IXGP16N60C2 , IXGP16N60C2D1 , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 , IXGP24N120C3 , GT45F122 , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , IXGP2N100A , IXGP30N120B3 , IXGP30N60B2 , IXGP30N60B4D1 , IXGP30N60C2 .

Keywords - IXGP24N60C transistor datasheet

 IXGP24N60C cross reference
 IXGP24N60C equivalent finder
 IXGP24N60C lookup
 IXGP24N60C substitution
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