DG120X07T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DG120X07T2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 893 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 240 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 201 nS

Encapsulados: TO247

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DG120X07T2 datasheet

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DG120X07T2

DG120X07T2 IGBT Discrete DOSEMI IGBT DG120X07T2 650V/120A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175o

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DG120X07T2

3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A

 9.2. Size:1184K  cn anhi
 adq120n080g2 adw120n080g2 adg120n080g2.pdf pdf_icon

DG120X07T2

ADQ120N080G2, ADW120N080G2, ADG120N080G2 1200V N-Channel Silicon Carbide Power MOSFET 1. Applications Asymmetrical Bridge Converter Inverter Single Switch Forward Flyback 2. Features Low drain-source on-resistance RDS(ON) = 80m (typ.) Easy to control Gate switching Enhancement mode Vth = 2 to 4 V Table 1 Key Performance Parameters Parameter Value Unit V 1200 V

Otros transistores... VBGN50N60, VBGT15N120, VBGT15N120P, VBGT15N135, VBGT25N135, VBGT30N135, DG10X06T1, DG10X12T2, FGH75T65UPD, DG15X06T1, DG15X12T2, DG20X06T2, DG30X07T2, HGTG12N60D1D, SIG20N60F, SIG20N60P, SIG25N60F