DG120X07T2 - аналоги, параметры транзистора - Справочник транзисторов

DG120X07T2 даташит

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DG120X07T2 IGBT Discrete DOSEMI IGBT DG120X07T2 650V/120A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175o

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3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A

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ADQ120N080G2, ADW120N080G2, ADG120N080G2 1200V N-Channel Silicon Carbide Power MOSFET 1. Applications Asymmetrical Bridge Converter Inverter Single Switch Forward Flyback 2. Features Low drain-source on-resistance RDS(ON) = 80m (typ.) Easy to control Gate switching Enhancement mode Vth = 2 to 4 V Table 1 Key Performance Parameters Parameter Value Unit V 1200 V

Другие IGBT... VBGN50N60 , VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , IRG4PC50U , DG15X06T1 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F .