All IGBT. G12N50C1 Datasheet

 

G12N50C1 IGBT. Datasheet pdf. Equivalent

Type Designator: G12N50C1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75W

Maximum Collector-Emitter Voltage |Vce|, V: 500V

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 50

Package: TO218

G12N50C1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

G12N50C1 PDF doc:

No PDF!

Datasheet: G10N40E1 , G10N50 , G10N50C1 , G10N50E1 , G12N40C1 , G12N40C1D , G12N40E1 , G12N40E1D , GT40T301 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , G12N60D1 , G20N120E2 , G20N60B3 , G20N60B3D .

 


G12N50C1
  G12N50C1
  G12N50C1
  G12N50C1
 
G12N50C1
  G12N50C1
  G12N50C1
  G12N50C1
 

social 

LIST

Last Update

IGBT: FF1000R17IE4D_B2 | FF1000R17IE4 | FD-DF80R12W1H3_B52 | FD900R12IP4DV | FD900R12IP4D | FD800R33KL2C-K_B5 | FD800R33KF2C-K | FD800R33KF2C | FD800R17KF6C_B2 | FD800R17KE3_B2 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers