DG15X06T1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DG15X06T1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 235 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 27 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 9 nS
Paquete / Cubierta: TO220
- Selección de transistores por parámetros
DG15X06T1 Datasheet (PDF)
dg15x06t1.pdf
DG15X06T1 IGBT Discrete DOSEMI IGBT DG15X06T1 600V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Fast IGBT technology Low switching loss Maximum junction temperature 175oC
dg15x12t2.pdf
DG15X12T2 IGBT Discrete DOSEMI IGBT DG15X12T2 1200V/15A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10s short circuit capability Low switching loss
Otros transistores... VBGT15N120 , VBGT15N120P , VBGT15N135 , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , SGP30N60 , DG15X12T2 , DG20X06T2 , DG30X07T2 , HGTG12N60D1D , SIG20N60F , SIG20N60P , SIG25N60F , SIG25N60P .
History: HGT1S2N120CNDS
History: HGT1S2N120CNDS
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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